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| SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3. SOURCE TO-220AB CHARACTERISTIC SYMBOL KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 30 2.0 2.0* 1.2* 8.0* 120 5.4 5.5 54 23 0.18 150 -55 150 mJ mJ V/ns Q KHB2D0N60F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID 1.2 IDP EAS EAR dv/dt PD 0.43 Tj Tstg 8.0 V V O B E G DIM MILLIMETERS A K L M J R D N N H W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB2D0N60F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA 2.32 0.5 62.5 5.5 62.5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R D D D N N H J PIN CONNECTION M G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 0.3 12.0 + 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 0.2 4.5 + _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB2D0N60P/F/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V 600 2.0 0.65 3.8 10 4.0 100 5.0 V V/ A V nA VGS=10V, ID=1.0A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB2D0N60P/F/F2 Fig1. ID - VDS 10 1 VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 0 5.5 V 10 5.0 V Bottom : 4.5V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 0 150 C 10 -1 25 C -1 -55 C 10 -2 10 -1 10 0 10 1 10 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 12 Fig4. RDS(ON) - ID On - Resistance RDS(ON) () VGS = 0V IDS = 250 10 8 6 4 2 0 1.1 VGS = 10V VGS = 20V 1.0 0.9 0.8 -100 -50 0 50 100 150 0 1 2 3 4 5 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 10 1 Fig6. RDS(ON) - Tj 2.5 VGS = 10V IDS = 2.0A Reverse Drain Current IS (A) Normalized On Resistance 2.0 1.5 1.0 0.5 0.0 -100 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2007. 5. 10 Revision No : 0 3/7 KHB2D0N60P/F/F2 Fig7. C - VDS 700 12 Fig8. Qg - VGS Gate - Source Voltage VGS (V) ID=2.0A VDS = 120V VDS = 300V Frequency = 1MHz 600 10 8 6 4 2 0 0 2 Capacitance (pF) 500 400 300 200 100 0 Ciss Coss VDS = 480V Crss 10-1 100 101 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB2D0N60P) 101 Operation in this area is limited by RDS(ON) Fig10. Safe Operation Area (KHB2D0N60F,KHB2D0N60F2) 101 Operation in this area is limited by RDS(ON) 100 s 10 s Drain Current ID (A) 100s 0 Drain Current ID (A) 1s 10 1s 10s 10 0 100 s DC 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse DC 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 100 101 102 103 10-2 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 2.0 1.6 1.2 0.8 0.4 0.0 25 Drain Current ID (A) 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB2D0N60P/F/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB2D0N60P/F/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(off) td(on) ton tr toff tf 2007. 5. 10 Revision No : 0 6/7 KHB2D0N60P/F/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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